Electrons in Large-Bandgap Bulk Semiconductors and Quantum Wells

Authors

N. A. ZAKHLENIUK
M. BABIKER
C. R. BENNETT
B. K. RIDLEY

DOI

-

Abstract

The analytical theory of hot electrons interacting with lattice vibrations, impurities, and interface roughness in quantum wells is developed. We have obtained new distribution functions which describe all the kinetic properties of the non-equilibrium electron gas. As a specific example we present the electric field dependence of the electron mobility in GaN-based quantum wells and in bulk GaN. The relative importance of the different scattering mechanisms is analysed in detail.

First Page

593

Last Page

602

Recommended Citation

ZAKHLENIUK, N. A.; BABIKER, M.; BENNETT, C. R.; and RIDLEY, B. K. (1999) "Electrons in Large-Bandgap Bulk Semiconductors and Quantum Wells," Turkish Journal of Physics: Vol. 23: No. 4, Article 9. Available at: https://journals.tubitak.gov.tr/physics/vol23/iss4/9