Turkish Journal of Physics
DOI
-
Abstract
In this work, electrical properties of porous silicon structures, formed with electrochemical anodization in HF acid solution under two different current densities, were investigated. In these experiments, Sb doped (111)-oriented n-type silicon samples with 0.006-0.015 \Omega cm resistivity was used. Samples were anodized in a solution of 38% HF and 99% C_2H_2OH at 1:1 ratio for 15 minutes. After anodization, the structures that formed at low current density (J = 5 mA/cm^2) was compared with structures that formed at high current density (J = 30 mA/cm^2). Both structures and electrical properties were investigated.
First Page
789
Last Page
798
Recommended Citation
ALGÜN, G. and ARIKAN, M. Ç. (1999) "An Investigation of Electrical Properties of Porous Silicon," Turkish Journal of Physics: Vol. 23: No. 4, Article 33. Available at: https://journals.tubitak.gov.tr/physics/vol23/iss4/33
