Turkish Journal of Physics
DOI
-
Abstract
We review the status of silicon-based optoelectronics with emphasis on light emitting diodes. Erbium-doped Si, por-Si and silicon-based superlattices and nanostructures are discussed. The origin behind light emission in silicon with feature sizes below about 60 nm still remains poorly understood.
First Page
665
Last Page
672
Recommended Citation
SIDIKI, TAMIM P. and TORRES, CLIVIA M. SOTOMAYOR (1999) "Silicon-Based Optoelectronics: Progress and Challenges," Turkish Journal of Physics: Vol. 23: No. 4, Article 17. Available at: https://journals.tubitak.gov.tr/physics/vol23/iss4/17
