Abstract

We review the status of silicon-based optoelectronics with emphasis on light emitting diodes. Erbium-doped Si, por-Si and silicon-based superlattices and nanostructures are discussed. The origin behind light emission in silicon with feature sizes below about 60 nm still remains poorly understood.

DOI

First Page

665

Last Page

672

Recommended Citation

SIDIKI, T. P, & TORRES, C. M (1999). Silicon-Based Optoelectronics: Progress and Challenges. Turkish Journal of Physics 23 (4): 665-672. https://doi.org/-

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