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Turkish Journal of Physics

DOI

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Abstract

The threshold voltage shift \Delta V_T and its components due to trapped-oxide charges \Delta V_{Not} and Si-SiO_2 interface traps \Delta V_N in MOSFET exposed to Bremsstrahlung, Co_{60} irradiation and annealing were studied. Several effects caused by differences in the photon energies from two types of sources are discussed as well as a mechanism of changing the trapped-oxide and Si-SiO_2 interface traps by annealing. The mechanism is based on previously available models.

First Page

485

Last Page

492

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