Ionizing Radiations and Annealing Influence on MOSFET Charge States

Authors

ZAINABIDINOV CIRAGIDDIN
ATAMURATOV ATABEK
YSUPOV AKHMED
ADINAEV KUVONDIK

DOI

-

Abstract

The threshold voltage shift \Delta V_T and its components due to trapped-oxide charges \Delta V_{Not} and Si-SiO_2 interface traps \Delta V_N in MOSFET exposed to Bremsstrahlung, Co_{60} irradiation and annealing were studied. Several effects caused by differences in the photon energies from two types of sources are discussed as well as a mechanism of changing the trapped-oxide and Si-SiO_2 interface traps by annealing. The mechanism is based on previously available models.

First Page

485

Last Page

492

Recommended Citation

CIRAGIDDIN, ZAINABIDINOV; ATABEK, ATAMURATOV; AKHMED, YSUPOV; and KUVONDIK, ADINAEV (1999) "Ionizing Radiations and Annealing Influence on MOSFET Charge States," Turkish Journal of Physics: Vol. 23: No. 3, Article 4. Available at: https://journals.tubitak.gov.tr/physics/vol23/iss3/4