Abstract

The threshold voltage shift \Delta V_T and its components due to trapped-oxide charges \Delta V_{Not} and Si-SiO_2 interface traps \Delta V_N in MOSFET exposed to Bremsstrahlung, Co_{60} irradiation and annealing were studied. Several effects caused by differences in the photon energies from two types of sources are discussed as well as a mechanism of changing the trapped-oxide and Si-SiO_2 interface traps by annealing. The mechanism is based on previously available models.

DOI

First Page

485

Last Page

492

Recommended Citation

CIRAGIDDIN, Z, ATABEK, A, AKHMED, Y, & KUVONDIK, A (1999). Ionizing Radiations and Annealing Influence on MOSFET Charge States. Turkish Journal of Physics 23 (3): 485-492. https://doi.org/-

Download