Turkish Journal of Physics
Abstract
Optically modulated photoconductivity (PC) properties of hydrogenated crystalline silicon (c-Si:H) with p-i-n junctions were investigated by frequency-resolved spectroscopy in the temperature range 20-290 K. The PC lifetime measurements of c-Si:H p-i-n show a second lifetime distribution which only dominates at low temperature under low illumination levels of excitation. Unlike the room temperature single lifetime distribution seen in c-Si:H p-i-n, the maximum of this second lifetime distribution shifts to longer times when the excitation intensity decreases, which reconciles with non-geminate pair recombination and thus the distant-pair model. In addition to lifetime measurements, the direct current-voltage (I-V) characteristics, the excitation light intensity- and electric field-dependence of the PC were also measured under various conditions. The results are discussed in terms of PC models proposed.
DOI
-
First Page
873
Last Page
884
Recommended Citation
KAPLAN, R, & KAPLAN, B (1998). Photoconductivity Studies of Crystalline Si:H p-i-n. Turkish Journal of Physics 22 (9): 873-884. https://doi.org/-
