Turkish Journal of Physics
DOI
-
Abstract
Optically modulated photoconductivity (PC) properties of hydrogenated crystalline silicon (c-Si:H) with p-i-n junctions were investigated by frequency-resolved spectroscopy in the temperature range 20-290 K. The PC lifetime measurements of c-Si:H p-i-n show a second lifetime distribution which only dominates at low temperature under low illumination levels of excitation. Unlike the room temperature single lifetime distribution seen in c-Si:H p-i-n, the maximum of this second lifetime distribution shifts to longer times when the excitation intensity decreases, which reconciles with non-geminate pair recombination and thus the distant-pair model. In addition to lifetime measurements, the direct current-voltage (I-V) characteristics, the excitation light intensity- and electric field-dependence of the PC were also measured under various conditions. The results are discussed in terms of PC models proposed.
First Page
873
Last Page
884
Recommended Citation
KAPLAN, Ruhi and KAPLAN, Bengü (1998) "Photoconductivity Studies of Crystalline Si:H p-i-n," Turkish Journal of Physics: Vol. 22: No. 9, Article 3. Available at: https://journals.tubitak.gov.tr/physics/vol22/iss9/3
