Turkish Journal of Physics
Abstract
In this study the aim was to investigate the effect of thermal annealing on the density of states (DOS) of hydrogenated amorphous silicon (a-Si:H) by means of a Schottky structure. In order to realize that goal the sandwich structured Au/a-Si:H/a-Si:H(n$^+$-type)/Cr Schottky diode was fabricated. The junction capacitance of the samples were measured as a function of the amplitude of alternating voltage in the frequency range of 500 Hz - 100 KHz and in the annealing temperature range of 23 - 175^oC. The density of states profile as a function of both annealing temperature and energy were plotted. The effect of the annealing on the density of states (DOS) is discussed.
DOI
-
First Page
453
Last Page
460
Recommended Citation
SERİN, Tülay (1998) "The Determination of Thermal Annealing Effect on the DOS Profile of a-Si:H Film," Turkish Journal of Physics: Vol. 22: No. 6, Article 1. Available at: https://journals.tubitak.gov.tr/physics/vol22/iss6/1
