Turkish Journal of Physics
Abstract
DC conductivity has been measured as function of dopant concentration for Se-As glass containing 2-10 \% As, doped with Cl or Br. It was established that concentration dependences of the conductivity have maxima for concentration of Cl or Br between $10^{-3}$ and $10^{-2}$ at \%. The effect of halogen impurities on electroconductivity of Se-As glasses has been attributed to the change of relative concentrations of the charged defect centers $(C^-_1, C^+_3)$ and to the occurrence of new $Cl^-, Br^-$ centers associated with chlorine (bromine) atoms and the compensation of the effect of arsenic on the energy spectrum of electron states.
DOI
-
First Page
263
Last Page
266
Recommended Citation
ISAOGLI, A, IBRAHIMGIZI, S, & KAMILOGLI, A (1998). The Effect of Halogen Impurities on Electrocunductivity of Chalcogenide Glass Semicunductor Se-As System. Turkish Journal of Physics 22 (3): 263-266. https://doi.org/-
