Turkish Journal of Physics
Abstract
DC conductivity has been measured as function of dopant concentration for Se-As glass containing 2-10 \% As, doped with Cl or Br. It was established that concentration dependences of the conductivity have maxima for concentration of Cl or Br between $10^{-3}$ and $10^{-2}$ at \%. The effect of halogen impurities on electroconductivity of Se-As glasses has been attributed to the change of relative concentrations of the charged defect centers $(C^-_1, C^+_3)$ and to the occurrence of new $Cl^-, Br^-$ centers associated with chlorine (bromine) atoms and the compensation of the effect of arsenic on the energy spectrum of electron states.
DOI
-
First Page
263
Last Page
266
Recommended Citation
ISAOGLI, A.I.; IBRAHIMGIZI, S.M.; and KAMILOGLI, A.R. (1998) "The Effect of Halogen Impurities on Electrocunductivity of Chalcogenide Glass Semicunductor Se-As System," Turkish Journal of Physics: Vol. 22: No. 3, Article 10. Available at: https://journals.tubitak.gov.tr/physics/vol22/iss3/10
