The Effect of Halogen Impurities on Electrocunductivity of Chalcogenide Glass Semicunductor Se-As System

Authors

A.I. ISAOGLI
S.M. IBRAHIMGIZI
A.R. KAMILOGLI

DOI

-

Abstract

DC conductivity has been measured as function of dopant concentration for Se-As glass containing 2-10 \% As, doped with Cl or Br. It was established that concentration dependences of the conductivity have maxima for concentration of Cl or Br between $10^{-3}$ and $10^{-2}$ at \%. The effect of halogen impurities on electroconductivity of Se-As glasses has been attributed to the change of relative concentrations of the charged defect centers $(C^-_1, C^+_3)$ and to the occurrence of new $Cl^-, Br^-$ centers associated with chlorine (bromine) atoms and the compensation of the effect of arsenic on the energy spectrum of electron states.

First Page

263

Last Page

266

Recommended Citation

ISAOGLI, A.I.; IBRAHIMGIZI, S.M.; and KAMILOGLI, A.R. (1998) "The Effect of Halogen Impurities on Electrocunductivity of Chalcogenide Glass Semicunductor Se-As System," Turkish Journal of Physics: Vol. 22: No. 3, Article 10. Available at: https://journals.tubitak.gov.tr/physics/vol22/iss3/10