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Turkish Journal of Physics

Ionizational Semiconductive Photographic System With Image Registration Upon Deposited AgBr Layers

DOI

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Abstract

Photographic processes in ionizational photographic system with image registration of AgBr layers are discussed. Si[Au] and GaAs are used as photorecievers. System sensitivity under the conditions of this experiment is 10^{-7} J/cm^{2}. The limiting resolving power determined by the optical system and photoreciever geometry was 18 lines per mm.

First Page

1017

Last Page

1022

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