Turkish Journal of Physics
The Binding Energy of the $Sb$ Donor State in Ge_{1-x}Si_{x} Grystals
Abstract
The singlet ground-state binding energy \varepsilon_1 of antimony impurity in Ge_{1-x}Si_x(0\leq x\leq, 3) has been determined on the basis of Hall measurements. It is shown that \varepsilon_1 increases linearly with Si concentration in Ge-like (0\leq x\leq 0, 12) and Si-like (x\geq,15) crystals. Experimental results have been analysed within effective mass approximation theory for shallow donors. Central core effect influence in the ground-state binding energy of antimony in Ge-like crystals was estimated.
DOI
-
First Page
891
Last Page
896
Recommended Citation
KYAZIMZADE, R (1997). The Binding Energy of the $Sb$ Donor State in Ge_{1-x}Si_{x} Grystals. Turkish Journal of Physics 21 (8): 891-896. https://doi.org/-
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