Turkish Journal of Physics
Dependence of Absorption Edge on Thickness in Ga_{2}Se_{3} Films
Abstract
Ga_{2}Se_{3) thin films having thickness comparable with the de Broglie wavelength of charge carriers have been prepared. Energy gap dependence of the amorphous films upon their thickness at the temperature of 195 K has been studied. A qualitative agreement with theoretical conclusions, implying that the observed increase in energy gap for amorphous G_{2}Se_{ 3} films is brought about by quantum size phenomena, has been established.
DOI
-
First Page
887
Last Page
890
Recommended Citation
MEDJIDOV, A. B.; ALI-ZADE, R. A.; JAFAROV, M. A.; and PASHAYEV, A. M. (1997) "Dependence of Absorption Edge on Thickness in Ga_{2}Se_{3} Films," Turkish Journal of Physics: Vol. 21: No. 8, Article 1. Available at: https://journals.tubitak.gov.tr/physics/vol21/iss8/1
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