Turkish Journal of Physics
Acceptor States for Short-Range Potential in InSb and HgTe
DOI
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Abstract
Found is the energy dependence of the acceptors states on films thickness and location of the impurities within the film. It is shown that, as the location of the impurity approaches. The edge of the film, the magnitude of splitting of the degenerated acceptors state increases.
First Page
829
Last Page
835
Recommended Citation
GASHIMZADE, F. M. and BABAEV, A. M. (1997) "Acceptor States for Short-Range Potential in InSb and HgTe," Turkish Journal of Physics: Vol. 21: No. 7, Article 6. Available at: https://journals.tubitak.gov.tr/physics/vol21/iss7/6
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