On the Theory of Current-Voltage Characteristic of Semiconductor Diode Structures with Strong Carrier Accumulation on Conditions of Saturation of the Recombination Rate

Authors

A. Yu. LEIDERMAN
M. K. MINBAEVA

Abstract

The theoretical treatment of forward-biased p-n-n^{+} structure with strong accumulation and field-opposed diffusion on conditions of saturation of recombination rate is obtained. It is shown that, as predicted in [1], on conditions of Shockley-Read recombination, the effect of \lq\lq injection exlusion" resulting in V(J) dependence of the type V^{\sim} exp(aJW) takes place at these conditions as well.

DOI

-

First Page

751

Last Page

756

Recommended Citation

LEIDERMAN, A. Y, & MINBAEVA, M. K (1997). On the Theory of Current-Voltage Characteristic of Semiconductor Diode Structures with Strong Carrier Accumulation on Conditions of Saturation of the Recombination Rate. Turkish Journal of Physics 21 (6): 751-756. https://doi.org/-