Turkish Journal of Physics
Dual Beam Photoconductivity in Amorphous Si:H\,\, p-i-n Junction Solar Cells
Dual beam photoconductivity measurements were carried out on hydrogenated amorphous silicon (a-Si:H) p-i-n junction solar cells between 20 K and 290 K by using in-phase and in-quadrature frequency-resolved spectropy method. The excitation light intensity, temperature and decay time dependence of photocurrent were investigated in detail under the dual beam excitation. The direct current-voltage (I-V) characteristics were also measured. The results were found to be extensively informative to explore recombination centers for photogenerated carriers and thus transport mechanisms in these materials.
KAPLAN, Ruhi and KAPLAN, Bengü (1997) "Dual Beam Photoconductivity in Amorphous Si:H\,\, p-i-n Junction Solar Cells," Turkish Journal of Physics: Vol. 21: No. 11, Article 7. Available at: https://journals.tubitak.gov.tr/physics/vol21/iss11/7