Turkish Journal of Physics
Dual Beam Photoconductivity in Amorphous Si:H\,\, p-i-n Junction Solar Cells
Abstract
Dual beam photoconductivity measurements were carried out on hydrogenated amorphous silicon (a-Si:H) p-i-n junction solar cells between 20 K and 290 K by using in-phase and in-quadrature frequency-resolved spectropy method. The excitation light intensity, temperature and decay time dependence of photocurrent were investigated in detail under the dual beam excitation. The direct current-voltage (I-V) characteristics were also measured. The results were found to be extensively informative to explore recombination centers for photogenerated carriers and thus transport mechanisms in these materials.
DOI
-
First Page
1171
Last Page
1180
Recommended Citation
KAPLAN, R, & KAPLAN, B (1997). Dual Beam Photoconductivity in Amorphous Si:H\,\, p-i-n Junction Solar Cells. Turkish Journal of Physics 21 (11): 1171-1180. https://doi.org/-
