•  
  •  
 

Turkish Journal of Physics

Formation of the Triangular Cluster in the Fractional Quantum Hall Regime

E.P. NAKHMEDOV

DOI

-

Abstract

The electron-electron (e-e) interactions in MOSFET- and GaAs-AlGaAs quantum wall structures are shown to give rise to appearance of a weak attraction between three electrons. One electron in the e-e interaction process can be trapped in inversion layer into the holes of uncompansated ionized acceptor in the depletion layer. This process is a time reversal one. By applying an unitary transformation the effective Hamiltonian is obtained, which charactarize the formation of triangular electron cluster. It is shown that three-electron effective potential will be attractive. The formation of a triangular electron cluster in two dimensional electron gas seems to be sufficient to understand the Fractional Quantum Hall effect, [1]. In a strong magnetic field the clusters will rotate around the axis, which crosses through the center of a cluster. The minimum value of the cluster's angular momentum is m=3, since the electron cluster become invariant under \pi /over 3 rotation. The Laughlin's wave function [2] for three electron cluster with m=3 should give the charge fraction, e^{\ast} =e /over 3. The result obtained are valid for small value of temperature and impurity concentration. The triangular clusters are unbound with increasing temperature.

First Page

155

Last Page

155

This document is currently not available here.

Share

COinS