Characteristic Growth Features and Etching of SnSe Single Crystals

Authors

S. M. VYAS
G. R. PANDYA
C. F. DESAI
R. C. SHAH

Abstract

SnSe Single Crystals have been grown by the Bridgman-Stockbarger method. Hexagonal spirals observed on top-free surface of the crystals have been reported. Crystal growth by screw dislocation mechanism has been found to be dominant. A new etchant capable of revealing dislocations intersecting the cleavage plane is also reported.

DOI

-

First Page

1041

Last Page

1044

Recommended Citation

VYAS, S. M, PANDYA, G. R, DESAI, C. F, & SHAH, R. C (1996). Characteristic Growth Features and Etching of SnSe Single Crystals. Turkish Journal of Physics 20 (9): 1041-1044. https://doi.org/-