Turkish Journal of Physics
Characteristic Growth Features and Etching of SnSe Single Crystals
Abstract
SnSe Single Crystals have been grown by the Bridgman-Stockbarger method. Hexagonal spirals observed on top-free surface of the crystals have been reported. Crystal growth by screw dislocation mechanism has been found to be dominant. A new etchant capable of revealing dislocations intersecting the cleavage plane is also reported.
DOI
-
First Page
1041
Last Page
1044
Recommended Citation
VYAS, S. M, PANDYA, G. R, DESAI, C. F, & SHAH, R. C (1996). Characteristic Growth Features and Etching of SnSe Single Crystals. Turkish Journal of Physics 20 (9): 1041-1044. https://doi.org/-
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