Characteristic Growth Features and Etching of SnSe Single Crystals

Authors

S. M. VYAS
G. R. PANDYA
C. F. DESAI
R. C. SHAH

DOI

-

Abstract

SnSe Single Crystals have been grown by the Bridgman-Stockbarger method. Hexagonal spirals observed on top-free surface of the crystals have been reported. Crystal growth by screw dislocation mechanism has been found to be dominant. A new etchant capable of revealing dislocations intersecting the cleavage plane is also reported.

First Page

1041

Last Page

1044

Recommended Citation

VYAS, S. M.; PANDYA, G. R.; DESAI, C. F.; and SHAH, R. C. (1996) "Characteristic Growth Features and Etching of SnSe Single Crystals," Turkish Journal of Physics: Vol. 20: No. 9, Article 6. Available at: https://journals.tubitak.gov.tr/physics/vol20/iss9/6