Technology and Characterization of Microwave Power GaAs MESFET for Space Communication

Authors

Sh. S. KHALILOV
V. E. SIZOV
A. S. VEDENEEV
A. G. ZHDAN

DOI

-

Abstract

A nondestructive diagnostic tool for microwave power GaAs NESFET for the space communication systems is presented. The parasitic effects and intrinsic characteristics of MESFETs at temperature range 77-300 K are investigated, and the main parameters of MESFET are determinated.

First Page

966

Last Page

969

Recommended Citation

KHALILOV, Sh. S.; SIZOV, V. E.; VEDENEEV, A. S.; and ZHDAN, A. G. (1996) "Technology and Characterization of Microwave Power GaAs MESFET for Space Communication," Turkish Journal of Physics: Vol. 20: No. 8, Article 27. Available at: https://journals.tubitak.gov.tr/physics/vol20/iss8/27