Technology and Characterization of Microwave Power GaAs MESFET for Space Communication

Authors

Sh. S. KHALILOV
V. E. SIZOV
A. S. VEDENEEV
A. G. ZHDAN

Abstract

A nondestructive diagnostic tool for microwave power GaAs NESFET for the space communication systems is presented. The parasitic effects and intrinsic characteristics of MESFETs at temperature range 77-300 K are investigated, and the main parameters of MESFET are determinated.

DOI

-

First Page

966

Last Page

969

Recommended Citation

KHALILOV, S. S, SIZOV, V. E, VEDENEEV, A. S, & ZHDAN, A. G (1996). Technology and Characterization of Microwave Power GaAs MESFET for Space Communication. Turkish Journal of Physics 20 (8): 966-969. https://doi.org/-