Photodetector on PtSi-Si Basis with Coding Device

Authors

Telman Enver Oglu MEKHTIEV
Khikmat Hamid Oglu ASADOV
Nasimi Farukh Oglu KASYMOV

Abstract

In this paper, PtSi-Si photodetector is described. Photodetector technology on the basis of PtSi-Si contact is developed. Electrophysical and photoelectric properties of these structures are investigated. For the high-speed processing of photodetector signal the new structure of parallel-serial type ADC is proposed. Time of conversion of the ADC are investigated.

DOI

-

First Page

891

Last Page

895

Recommended Citation

MEKHTIEV, T. E, ASADOV, K. H, & KASYMOV, N. F (1996). Photodetector on PtSi-Si Basis with Coding Device. Turkish Journal of Physics 20 (8): 891-895. https://doi.org/-