Turkish Journal of Physics

Laser Probing of the Space Charge in the High Resistance Semiconductor Crystals




A method of laser probing space charge in high resistance semiconducting crystals has been suggested. It allows one to estimate the value of a space charge field and its concentration. In combination with temperature measurements, the method also allows one to estimate the deep levels position in the energy gap and define the electron transitions scheme. The method was checked using GaAs and ZnSe crystals. It was assumed that, in these crystals, the centers with negative correlation energy play the predominant role on the electrooptical properties of crystals.

First Page


Last Page


This document is currently not available here.