Turkish Journal of Physics
A Simple Method to Determine Carrier Concentration Dependence of Mobility in a GaAs Modfet Structure
DOI
-
Abstract
A simple method of determining the relation between the sheet carrier concentration, n_{s}, and the drift mobility, \mu, of the two- dimensional electron gas (2DEG) in a Modulation Doped Field Effect Transistor (MODFET), is reported. The method is valid within the regime where the well-known charge control model is obeyed. The relation between \mu and n_{s} is found to be obeying the power law of \mu\,\,\alpha \,\,n_{s}^{0.7} at a temperature of 4.2 K for a 20nm thick spacer layered MODFET.
First Page
263
Last Page
268
Recommended Citation
EROL, Mustafa (1996) "A Simple Method to Determine Carrier Concentration Dependence of Mobility in a GaAs Modfet Structure," Turkish Journal of Physics: Vol. 20: No. 3, Article 9. Available at: https://journals.tubitak.gov.tr/physics/vol20/iss3/9
