Turkish Journal of Physics
Acceptor Levels of Substitutional Zn, Cd and Hg Impurity Atoms in Ge_{1-x}Si_x Crystals
Abstract
Hall measurement has been carried out for a set of Zn, Cd and Hg-doped Ge_{1-x}Si_x crystals (0 \leq X \leq 0,3). It is shown that the substitutional Zn_s and Cd_s atoms in Ge_{1-x}Si_x and Si behave as double acceptor as in Ge. In silicon the Hg_s atoms give rise to one deep acceptor center. The binding energies of the Zn_s, Cd_s and Hg_s acceptor states in Ge_{1-x}Si_x increase linearly with the silicon content. This result agrees qualitatively with the concept of a virtual crystal model. Random-alloy splitting of the Zn_s, Cd_s and Hg_s impurity levels in the crystals is iscussed.
DOI
-
First Page
269
Last Page
274
Recommended Citation
AZHDAROV, G. K, & KYAZIMZADE, R (1996). Acceptor Levels of Substitutional Zn, Cd and Hg Impurity Atoms in Ge_{1-x}Si_x Crystals. Turkish Journal of Physics 20 (3): 269-274. https://doi.org/-
