Tensor Hall-Effect in Compensated Silicon
The effect of unixial compression along the  direction on electrophysical parameters of Si alloyed with Ni has been studied as a function of the conductivity type and compensation degree. The results have thus shown that in all the specimens we investigated resistance decreased with the applied pressure. The studies on the Hall effect indicate that for n-Si samples the density of current carriers increases and mobility decreases. Thus, for p-Si samples the effect of tensor resistance strengthes, mobility increases, and density increases insignificantly with the compensation degree. Variations of this sort are connected with the shear deformation which is manifested at Ni impurity levels and, in turn, with variations in energy gap between deep levels and allowed zones due to uniaxial compression.
ZAINABIDINOV, Sirojidin; MAMATKARIMOV, Odiljon; TURSUNOV, Ikromjon; and KHAMIDOV, Rustam (1996) "Tensor Hall-Effect in Compensated Silicon," Turkish Journal of Physics: Vol. 20: No. 12, Article 7. Available at: https://journals.tubitak.gov.tr/physics/vol20/iss12/7