On Radiation Processes in Silicon Doped with Rhodium and Sulphur

Authors

M. KARIMOV

Abstract

The effect of Rh and S atom concentration influence on carriers removal rate in n-Si and Si under fast neutrons irradiation has been investigated. It was shown that the initial rate of carrier concentration removal decreases with increasing Rh concentration in n-Si with increasing S atom's concentration. This anomaly is connected with the degree of conductivity homogeneity and the change in degree of compensation in n-Si and n-Si.

DOI

-

First Page

1195

Last Page

1201

Recommended Citation

KARIMOV, M (1996). On Radiation Processes in Silicon Doped with Rhodium and Sulphur. Turkish Journal of Physics 20 (11): 1195-1201. https://doi.org/-