On Radiation Processes in Silicon Doped with Rhodium and Sulphur

Authors

M. KARIMOV

Abstract

The effect of Rh and S atom concentration influence on carriers removal rate in n-Si and Si under fast neutrons irradiation has been investigated. It was shown that the initial rate of carrier concentration removal decreases with increasing Rh concentration in n-Si with increasing S atom's concentration. This anomaly is connected with the degree of conductivity homogeneity and the change in degree of compensation in n-Si and n-Si.

DOI

-

First Page

1195

Last Page

1201

Recommended Citation

KARIMOV, M. (1996) "On Radiation Processes in Silicon Doped with Rhodium and Sulphur," Turkish Journal of Physics: Vol. 20: No. 11, Article 4. Available at: https://journals.tubitak.gov.tr/physics/vol20/iss11/4