Turkish Journal of Physics
Peculiarity of Hole Mobility in Silicon Compensated with Sulphur
DOI
-
Abstract
It has been observed that \mu increases in n-Si as the free carrier concentration in the conduction band (at \sim 300K)- together with the temperature in the 77-100 K region increases. Such anomalous behavior of \mu is explained by the presence of a microinhomogeneities of high- resistance inclusion (n-regions) in the low resistance bulk (n^{+}- regions), which form during the doping process of the silicon with sulphur ( S), and is independent of cooling rate in the interval 4-300 ^{\circ}C. min^{-1}.
First Page
1191
Last Page
1194
Recommended Citation
KARIMOV, M. (1996) "Peculiarity of Hole Mobility in Silicon Compensated with Sulphur," Turkish Journal of Physics: Vol. 20: No. 11, Article 3. Available at: https://journals.tubitak.gov.tr/physics/vol20/iss11/3
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