Turkish Journal of Physics
Radiation Induced Defect Production in Iridium Doped Silicon
DOI
-
Abstract
Presented are the results of studies of some parameters of the Ir-centers in n-Si and of defect production processes in n-Si under the effect of ^{60}Co \gamma-rays. After irradiation with a does of 10^{7} Gy five energy levels have been observed in the DLTS spectrum of n-i. A conclusion has been drawn that of these the E_{c}-0.20 eV level belongs to the \lq\lq P atom +Ir atom + Vacancy" complex, two levels belong to well- known conventional A- and E- centers and the rest to Ir centers in silicon themselves.
First Page
1109
Last Page
1111
Recommended Citation
YUNUSOV, M. S.; AKHMADALIEV, A. A.; and TURAEV, T. N. (1996) "Radiation Induced Defect Production in Iridium Doped Silicon," Turkish Journal of Physics: Vol. 20: No. 10, Article 3. Available at: https://journals.tubitak.gov.tr/physics/vol20/iss10/3
