Radiation Induced Defect Production in Iridium Doped Silicon

Authors

M. S. YUNUSOV
A. A. AKHMADALIEV
T. N. TURAEV

Abstract

Presented are the results of studies of some parameters of the Ir-centers in n-Si and of defect production processes in n-Si under the effect of ^{60}Co \gamma-rays. After irradiation with a does of 10^{7} Gy five energy levels have been observed in the DLTS spectrum of n-i. A conclusion has been drawn that of these the E_{c}-0.20 eV level belongs to the \lq\lq P atom +Ir atom + Vacancy" complex, two levels belong to well- known conventional A- and E- centers and the rest to Ir centers in silicon themselves.

DOI

-

First Page

1109

Last Page

1111

Recommended Citation

YUNUSOV, M. S, AKHMADALIEV, A. A, & TURAEV, T. N (1996). Radiation Induced Defect Production in Iridium Doped Silicon. Turkish Journal of Physics 20 (10): 1109-1111. https://doi.org/-