An analytical model to assess DC characteristics of independent gate Si FinFETs

Authors

UMER FAROOQ AHMED
MUHAMMAD MANSOOR AHMED

DOI

10.3906/elk-1812-143

Abstract

In this paper, Poisson's equation is utilized to find the potential distribution inside the channel of an independent gate FinFET device by adding the effect of channel height. The channel height of the device plays an important role in surface potential calculation when top gate voltage is applied. Using surface potential, an I - V model is developed, which can find the device current both in linear and saturation regions of operation. The model is tested on devices of different dimensions and good agreement between modeled and simulated results is observed, which validates the authenticity of the proposed model.

Keywords

Independent gate, FinFET, surface potential, I - V model

First Page

2456

Last Page

2465

Recommended Citation

AHMED, UMER FAROOQ and AHMED, MUHAMMAD MANSOOR (2019) "An analytical model to assess DC characteristics of independent gate Si FinFETs," Turkish Journal of Electrical Engineering and Computer Sciences: Vol. 27: No. 4, Article 6. https://doi.org/10.3906/elk-1812-143
Available at: https://journals.tubitak.gov.tr/elektrik/vol27/iss4/6