InGaAs nBn SWIR detector design with lattice-matched InAlGaAs barrier

Authors

FATİH UZGUR
SERDAR KOCAMAN

DOI

10.3906/elk-1802-197

Abstract

Dark current optimization with band gap engineering has been numerically studied for InGaAs nBn type infrared photodetectors. Undoped InAlGaAs grading layers are utilized in constructing the barrier and dipole delta-doped layers are placed in both sides of the graded layers for eliminating valence band offset. As a result, the high band gap barrier layer blocks the majority carriers and allows minority carrier flow while minimizing various dark current components, as expected from an nBn detector. Substantial improvement has been shown in the dark current level without compromising any photoresponse compared to the conventional pn junction and recently proposed all InGaAs nBn type photodetectors.

Keywords

Infrared imaging, barrier photodetectors, optoelectronic devices

First Page

1

Last Page

10

Recommended Citation

UZGUR, FATİH and KOCAMAN, SERDAR (2019) "InGaAs nBn SWIR detector design with lattice-matched InAlGaAs barrier," Turkish Journal of Electrical Engineering and Computer Sciences: Vol. 27: No. 1, Article 1. https://doi.org/10.3906/elk-1802-197
Available at: https://journals.tubitak.gov.tr/elektrik/vol27/iss1/1