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Turkish Journal of Electrical Engineering and Computer Sciences

DOI

10.3906/elk-1307-80

Abstract

This paper presents a new derivative superposition Gilbert cell to minimize the third-order nonlinear current term of transconductance transistors. To decrease the parasitic capacitance effect on gain, noise figure, and linearity of the circuit, extra inductors and capacitors are added between the switching and transconductance stages. The proposed mixer is simulated in 0.18-$\mu $m RF-CMOS technology with a 1.8-V supply. The results show an improvement of about 23 dBm in IIP3 compared to conventional mixers. The power consumption of this circuit is about 3.96 mW.

Keywords

CMOS, common source mixer, highly linear, derivative superposition technique, transconductance stage

First Page

571

Last Page

579

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