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Turkish Journal of Electrical Engineering and Computer Sciences

DOI

10.3906/elk-0812-29

Abstract

In this study, the reverse-recovery behaviors of pin and p^+n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to solve the semiconductor equations. MatLab partial differential equation solver was used. The reverse recovery response of pin and p^+n diodes was obtained for various values of a resistor in series and of carrier lifetime. The transient response for voltage and current was determined.

First Page

87

Last Page

96

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