Turkish Journal of Electrical Engineering and Computer Sciences
Abstract
In this study, the reverse-recovery behaviors of pin and p^+n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to solve the semiconductor equations. MatLab partial differential equation solver was used. The reverse recovery response of pin and p^+n diodes was obtained for various values of a resistor in series and of carrier lifetime. The transient response for voltage and current was determined.
DOI
10.3906/elk-0812-29
Keywords
Reverse recovery, pin diode, semiconductor devices, semiconductor devices simulation
First Page
87
Last Page
96
Recommended Citation
KESERLİOĞLU, M. S, & ERKAYA, H. H (2011). Simulation of storage time versus reverse bias current for p^+n and pin diodes. Turkish Journal of Electrical Engineering and Computer Sciences 19 (1): 87-96. https://doi.org/10.3906/elk-0812-29
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Computer Engineering Commons, Computer Sciences Commons, Electrical and Computer Engineering Commons
