Simulation of storage time versus reverse bias current for p^+n and pin diodes

Authors

MEHMET SERHAT KESERLİOĞLU
HASAN HÜSEYİN ERKAYA

DOI

10.3906/elk-0812-29

Abstract

In this study, the reverse-recovery behaviors of pin and p^+n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to solve the semiconductor equations. MatLab partial differential equation solver was used. The reverse recovery response of pin and p^+n diodes was obtained for various values of a resistor in series and of carrier lifetime. The transient response for voltage and current was determined.

Keywords

Reverse recovery, pin diode, semiconductor devices, semiconductor devices simulation

First Page

87

Last Page

96

Recommended Citation

KESERLİOĞLU, MEHMET SERHAT and ERKAYA, HASAN HÜSEYİN (2011) "Simulation of storage time versus reverse bias current for p^+n and pin diodes," Turkish Journal of Electrical Engineering and Computer Sciences: Vol. 19: No. 1, Article 7. https://doi.org/10.3906/elk-0812-29
Available at: https://journals.tubitak.gov.tr/elektrik/vol19/iss1/7