The Effect of Collector Doping on InP-Based Double Heterojunction Bipolar Transistors

Authors

SERKAN TOPALOĞLU
JÖRN DRIESEN
WERNER PROST
FRANZ JOSEF TEGUDE

DOI

-

Abstract

High current effects on double heterojunction bipolar transistor (DHBT) performance were investigated. Three DHBTs with different collector doping densities were grown and processed. DC and RF measurements were performed to evaluate the influence of collector doping and the related Kirk effect on HBT performance. In addition to these samples, the Kirk effect was proven on SHBTs and the delay of this effect on submicron HBTs was investigated.

First Page

429

Last Page

436

Recommended Citation

TOPALOĞLU, SERKAN; DRIESEN, JÖRN; PROST, WERNER; and TEGUDE, FRANZ JOSEF (2006) "The Effect of Collector Doping on InP-Based Double Heterojunction Bipolar Transistors," Turkish Journal of Electrical Engineering and Computer Sciences: Vol. 14: No. 3, Article 5. Available at: https://journals.tubitak.gov.tr/elektrik/vol14/iss3/5