Dual Beam Photoconductivity in Amorphous Si:H\,\, p-i-n Junction Solar Cells

Authors: Ruhi KAPLAN, Bengü KAPLAN

Abstract: Dual beam photoconductivity measurements were carried out on hydrogenated amorphous silicon (a-Si:H) p-i-n junction solar cells between 20 K and 290 K by using in-phase and in-quadrature frequency-resolved spectropy method. The excitation light intensity, temperature and decay time dependence of photocurrent were investigated in detail under the dual beam excitation. The direct current-voltage (I-V) characteristics were also measured. The results were found to be extensively informative to explore recombination centers for photogenerated carriers and thus transport mechanisms in these materials.