Space Charge Limited Current at High Fields in Al-Ge-Al Surface Barrier Devices

Authors: A. I. MUKOLU

Abstract: The current-voltage (I-V) characteristics of Aluminium-Germanium-Aluminium (Al-Ge-Al) surface barrier devices at different fields (<1,000V/cm) have been investigated. The results reveal that in the low field region (<300 V/cm), the conduction is ohmic while in the high field region (>300 V/cm), the current is proportional to the square of the applied voltage and is interpreted in terms of space charge-limited current. Also, the overall analysis of the results shows that the surface conductance (\delta_{s}) of the samples increases with film thickness. The empirically determined values of\delta_{s} vary from 0.40 to 0.93 \Omega^{-1}m^{-2} as the thickness of the films increased from 500 to 2000 Å.


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