Authors: M.S. YUNUSOV, M. KARIMOV, B.L. OKSENGENDLER, M.A. ZHALELOV
Abstract: Carrier removal rate in $n-Si \langle P, Rh \rangle$ with different doping rhodium concentrations were investigated under fast neutrons irradiation. It is shown that the rate of carrier removal increases with phosphorus atom concentration but decreases with rhodium atom concentration. Theoretical analysis on the base of kinetic equations has shown that standard scheme of quasichemical reactions taking into account the interaction between rhodium atoms, vacancies and self interstitial atoms could not explain the results of experiment. Therefore a new model based on the use of radiation to increase the barrier between regions of fluctuating impurity concentration has been proposed.
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