Authors: VALERIY KIDALOV, ALENA DYADENCHUK, YURIY BACHERIKOV, ANTON ZHUK, TETYANA GORBANIUK, IGOR ROGOZIN, VITALI KIDALOV
Abstract: In the present work, ZnO films were obtained on mesoporous silicon substrates by the method of HF magnetron sputtering of a metallic zinc target in reaction oxygen and argon gas medium. The properties of the ZnO films obtained on mesoporous substrates were studied depending on the ratio of the partial pressures of the working gases (argon/oxygen). X-ray analysis showed that in the process of deposition, the ZnO films of a hexagonal structure were formed. The effect of the porous layer on the structural and luminescent properties of the thin ZnO films was studied. The results showed that the porous silicon substrate reduces residual stresses and can be used for obtaining high-quality ZnO films.
Keywords: ZnO film, porous Si, HF magnetron sputtering
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