Authors: G. ALGÜN, M. Ç. ARIKAN
Abstract: In this work, electrical properties of porous silicon structures, formed with electrochemical anodization in HF acid solution under two different current densities, were investigated. In these experiments, Sb doped (111)-oriented n-type silicon samples with 0.006-0.015 \Omega cm resistivity was used. Samples were anodized in a solution of 38% HF and 99% C_2H_2OH at 1:1 ratio for 15 minutes. After anodization, the structures that formed at low current density (J = 5 mA/cm^2) was compared with structures that formed at high current density (J = 30 mA/cm^2). Both structures and electrical properties were investigated.
Full Text: PDF