Authors: BEDDIAF ZAIDI, BOUZID HADJOUDJA, HOUDA FELFLI, ALLAOUA CHIBANI
Abstract: In this work, we investigate the influence of doping as well as heat treatments on the mobility of the carriers in polycrystalline silicon layers. It was found that any increase in both parameters leads to an increase in the mobility of the carriers. Such mobilities were shown to be higher in boron doped layers that those doped with arsenic. Moreover, for strong arsenic doping, after the initial increase, we observed a saturation region followed by a final decrease of carrier mobility.
Keywords: Solar photovoltaic cells, polycrystalline silicon, grain boundary, carrier mobility, doping, heat treatments
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