Authors: KADDOUR BENCHERIF, MOHAMED SEHIL, HAMZA ABID, MOHAMED ELHADI LOUHIBI
Abstract: The electronic structure of binary compounds AlN and GaN are presented. We have used the empirical pseudo-potential method. Good agreement between the calculated results and experiment is obtained. The charge densities are presented for the sum of the four valence bands of both AlN and GaN.
Keywords: Empirical Pseudo-potential Method (EPM), nitride aluminium, nitride gallium compounds, III-N semi-conductors, wide band gap semi-conductors, energy gap, charge density
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