Ionizational Semiconductive Photographic System With Image Registration Upon Deposited AgBr Layers

Authors: Vachab T. TOULANOV, Sirajidin Z. ZAYNABIDINOV

Abstract: Photographic processes in ionizational photographic system with image registration of AgBr layers are discussed. Si[Au] and GaAs are used as photorecievers. System sensitivity under the conditions of this experiment is 10^{-7} J/cm^{2}. The limiting resolving power determined by the optical system and photoreciever geometry was 18 lines per mm.