Effect of Ionizing Radiation on the Silicon IMPATT Diode Characteristics

Authors: M. B. TAGAEV

Abstract: We investigated the effect of ^{60}Co \gamma-irradiation (doses from 10^2 to 2 \times 10^6 Gy), both without and with heat annealing, on silicon IMPATT diode parameters. It is shown that such treatments improve the diode characteristics (particularly decrease the reverse current and increase both the output and the diffusion length of the minority charge carriers) due to radiation-enhanced processes.


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