Authors: MEHMET SERHAT KESERLİOĞLU, HASAN HÜSEYİN ERKAYA
Abstract: In this study, the reverse-recovery behaviors of pin and p^+n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to solve the semiconductor equations. MatLab partial differential equation solver was used. The reverse recovery response of pin and p^+n diodes was obtained for various values of a resistor in series and of carrier lifetime. The transient response for voltage and current was determined.
Keywords: Reverse recovery, pin diode, semiconductor devices, semiconductor devices simulation
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