Authors: Telman Enver Oglu MEKHTIEV, Khikmat Hamid Oglu ASADOV, Nasimi Farukh Oglu KASYMOV
Abstract: In this paper, PtSi-Si photodetector is described. Photodetector technology on the basis of PtSi-Si contact is developed. Electrophysical and photoelectric properties of these structures are investigated. For the high-speed processing of photodetector signal the new structure of parallel-serial type ADC is proposed. Time of conversion of the ADC are investigated.