Authors: VAKHAB T. TOULANOV, AZIZA SH. DAVLETOVA, LESBEK T. TASHIMOV, KAMILA A. ORTAEVA
Abstract: This paper deals with the derivation of common formulae for induced impurity photosensibility with an arbitrary set of energy levels in the semiconductor gap. We give the expression for the real recombinational situation with two types of impurity levels as well. The basic properties and certain common peculiarities concerning induced photoconductivity in semiconductors are under consideration.
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