Authors: Kıvılcım KILIÇ, Hüseyin ÇELİK
Abstract: The role of the residual resistivity ratio (RRR) measurements in the determination of the carrier concentration of tin and lead doped bismuth samples is discussed. The carrier density and the corresponding atomic pergentages of some of the samples understudy were determined by measuring the high-field Hall coefficient at 4.2K. The dependence of the transverse magnetoresistance on the magnetic field up to 2.2T is reported at low temperatures. The effect of the concentration to this behaviour is investigated.